光电二极管功率探头(C系列)
型号
S120VC
S120C
S121C
S122Ca
单价(元)
4300
3100
3400
6100
传感器类型
硅光电二极管
(紫外增强)
锗光电二极管
波长范围
200 nm - 1100 nm
400 nm - 1100 nm
700 nm - 1800 nm
功率范围
50 nW - 50 mW
500 nW - 500 mW
50 nW - 40 mW
最大平均功率密度
20 W/cm
10 W/cm
最大脉冲能量
20 µJ
线性度
±0.5%
分辨率
1 nW
10 nW
2 nW
测量不确定度
±3% (440 - 980 nm) ±5% (280 - 439 nm) ±7% (200 - 279 nm, 981 - 1100 nm)
±3% (440 - 980 nm) ±5% (400 - 439 nm) ±7% (981 - 1100 nm)
±5%
S130VC
S130C
S132C
6200
5100
7300
500 pW - 0.5 mWc (Up to 50 mW)c
500 pW - 5 mW (Up to 500 mW)
5 nW - 5 mW (Up to 500 mW)
100 pW
±3% (440 - 980 nm) ±5% (400 - 439 nm) ±7% (200 - 279 nm, 981 - 1100 nm)
±3% (440 - 980 nm) ±5% (280 - 439 nm) ±7% (981 - 1100 nm)
用于超薄光电二极管探头的安装座
S116C
3800
400 - 1100 nm
20 nW - 50 mW
20 W/cm²
±3% (451 - 1000 nm) ±5% (400 - 450 nm, 1001 - 1100 nm)
S170C
12000
350 - 1100 nm
10 nW - 150 mW
最大脉冲能量密度
N/A
±3% (440 - 980 nm) ±5% (350 - 439 nm) ±7% (981 - 1100 nm)
S140C
S142C
S144C
S145C
S146C
S148C
S180C
7000
10000
9000
10500
39000
Si Photodiode
InGaAs Photodiode
HgCdTe (MCT)
Photodiode
350 nm - 1100 nm
800 nm - 1700 nm
900 nm - 1650 nm
1200 - 2500 nm
2900 - 5500 nm
1 µW - 500 mW
1 µW - 5 W
1 µW - 3 W
10 µW - 20 W
1 µW - 1 W
1 kW/cm²
2 kW/cm²
1 J/cm²
7 J/cm²
S150C
S151C
S154C
S155C
3500
4400
100 pW - 5 mW (-70 dBm to 7 dBm)
1 nW - 20 mW (-60 dBm to 13 dBm)
100 pW - 3 mW (-70 dBm to 5 dBm)
100 mW/cm²
10 W/cm²
10 pW (-80 dBm)
100 pW (-70 dBm)